JAN1N6629US
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Microsemi Corporation JAN1N6629US

Manufacturer No:
JAN1N6629US
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
JAN1N6629US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 880V 1.4A D5B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):880 V
Current - Average Rectified (Io):1.4A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:2 µA @ 880 V
Capacitance @ Vr, F:40pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:E-MELF
Supplier Device Package:D-5B
Operating Temperature - Junction:-65°C ~ 150°C
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Part Number JAN1N6629US JAN1N6620US   JAN1N6621US   JAN1N6622US   JAN1N6623US   JAN1N6624US   JAN1N6625US   JAN1N6627US   JAN1N6628US  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 880 V 220 V 75 V 660 V 880 V 990 V 1100 V 440 V 660 V
Current - Average Rectified (Io) 1.4A 2A 200mA 1.2A 1A 1A 1A 1.75A 1.75A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.4 A 1.6 V @ 2 A 1.2 V @ 100 mA 1.4 V @ 1.2 A 1.55 V @ 1 A 1.55 V @ 1 A 1.75 V @ 1 A 1.35 V @ 1.2 A 1.35 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 30 ns 20 ns 30 ns 50 ns 50 ns 60 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 880 V 500 nA @ 220 V 500 nA @ 75 V 500 nA @ 660 V 500 nA @ 880 V 500 nA @ 990 V 1 µA @ 1100 V 2 µA @ 440 V 2 µA @ 660 V
Capacitance @ Vr, F 40pF @ 10V, 1MHz 10pF @ 10V, 1MHz 2.8pF @ 1.5V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case E-MELF SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, E E-MELF
Supplier Device Package D-5B D-5A D-5A D-5A D-5A D-5A D-5A D-5B D-5B
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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