Microsemi Corporation-APTM100TDU35PG - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	6 N-Channel (3-Phase Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:	22A
Rds On (Max) @ Id, Vgs:	420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:	186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	5200pF @ 25V
Power - Max:	390W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP6
Supplier Device Package:	SP6-P

Microsemi Corporation APTM100TDU35PG