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APTM100TDU35PG
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Microsemi Corporation APTM100TDU35PG

Manufacturer No:
APTM100TDU35PG
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APTM100TDU35PG Datasheet
ECAD Model:
-
Description:
MOSFET 6N-CH 1000V 22A SP6-P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:6 N-Channel (3-Phase Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:22A
Rds On (Max) @ Id, Vgs:420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:5200pF @ 25V
Power - Max:390W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP6
Supplier Device Package:SP6-P
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In Stock

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