Microsemi Corporation-APTGT200A602G - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	290 A
Power - Max:	625 W
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 200A
Current - Collector Cutoff (Max):	50 µA
Input Capacitance (Cies) @ Vce:	12.3 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP2
Supplier Device Package:	SP2

Microsemi Corporation APTGT200A602G