Microsemi Corporation-APTGFQ25H120T2G - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	NPT and Fieldstop
Configuration:	Full Bridge
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	40 A
Power - Max:	227 W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 25A
Current - Collector Cutoff (Max):	250 µA
Input Capacitance (Cies) @ Vce:	2.02 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	SP2
Supplier Device Package:	SP2

Microsemi Corporation APTGFQ25H120T2G