Microsemi Corporation-APTGF165A60D1G - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	NPT
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	230 A
Power - Max:	781 W
Vce(on) (Max) @ Vge, Ic:	2.45V @ 15V, 200A
Current - Collector Cutoff (Max):	250 µA
Input Capacitance (Cies) @ Vce:	9 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-
Mounting Type:	Chassis Mount
Package / Case:	D1
Supplier Device Package:	D1

Microsemi Corporation APTGF165A60D1G