APT9F100S
  • Share:

Microsemi Corporation APT9F100S

Manufacturer No:
APT9F100S
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT9F100S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 9A D3PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2606 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):337W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
278

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT9F100S APT9M100S   APT9F100B  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 5A, 10V 1.4Ohm @ 5A, 10V 1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2606 pF @ 25 V 2605 pF @ 25 V 2606 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 337W (Tc) 335W (Tc) 337W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package D3PAK D3PAK TO-247 [B]
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

Related Product By Categories

NTD24N06LT4G
NTD24N06LT4G
onsemi
MOSFET N-CH 60V 24A DPAK
DMTH6010SK3Q-13
DMTH6010SK3Q-13
Diodes Incorporated
MOSFET N-CH 60V 16.3A/70A TO252
SI7810DN-T1-E3
SI7810DN-T1-E3
Vishay Siliconix
MOSFET N-CH 100V 3.4A PPAK1212-8
TK72A12N1,S4X
TK72A12N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 120V 72A TO220SIS
PMV48XPA215
PMV48XPA215
NXP USA Inc.
P-CHANNEL MOSFET
RM35P30LD
RM35P30LD
Rectron USA
MOSFET P-CHANNEL 30V 35A TO252-2
DMG4466SSSL-13
DMG4466SSSL-13
Diodes Incorporated
MOSFET N-CH 30V 10A 8SO
FDB7030L_L86Z
FDB7030L_L86Z
onsemi
MOSFET N-CH 30V 80A TO263AB
BUZ32 E3045A
BUZ32 E3045A
Infineon Technologies
MOSFET N-CH 200V 9.5A D2PAK
IXFN64N50PD3
IXFN64N50PD3
IXYS
MOSFET N-CH 500V 50A SOT227B
IPB06P001LATMA1
IPB06P001LATMA1
Infineon Technologies
MOSFET P-CH 60V 100A TO263-3
RCJ331N25TL
RCJ331N25TL
Rohm Semiconductor
250V 33A, NCH, TO-263S, POWER MO

Related Product By Brand

MXP5KE28AE3
MXP5KE28AE3
Microsemi Corporation
TVS DIODE 28VWM 45.4VC DO204AL
1N5249A (DO-35)
1N5249A (DO-35)
Microsemi Corporation
DIODE ZENER 19V 500MW DO35
1N5913DG
1N5913DG
Microsemi Corporation
DIODE ZENER 3.3V 1.25W DO204AL
1N5260BDO35
1N5260BDO35
Microsemi Corporation
DIODE ZENER 43V 500MW DO35
1N5228BDO35E3
1N5228BDO35E3
Microsemi Corporation
DIODE ZENER 3.9V 500MW DO35
1N4731CPE3/TR12
1N4731CPE3/TR12
Microsemi Corporation
DIODE ZENER 4.3V 1W DO204AL
2EZ91D2E3/TR12
2EZ91D2E3/TR12
Microsemi Corporation
DIODE ZENER 91V 2W DO204AL
SMBJ4742CE3/TR13
SMBJ4742CE3/TR13
Microsemi Corporation
DIODE ZENER 12V 2W SMBJ
SMBJ5338C/TR13
SMBJ5338C/TR13
Microsemi Corporation
DIODE ZENER 5.1V 5W SMBJ
1PMT5916E3/TR7
1PMT5916E3/TR7
Microsemi Corporation
DIODE ZENER 4.3V 3W DO216AA
1PMT5922C/TR7
1PMT5922C/TR7
Microsemi Corporation
DIODE ZENER 7.5V 3W DO216AA
LX8384-15IDD
LX8384-15IDD
Microsemi Corporation
IC REG CONV 1OUT 1.5V 5A TO263