APT80SM120J
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Microsemi Corporation APT80SM120J

Manufacturer No:
APT80SM120J
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT80SM120J Datasheet
ECAD Model:
-
Description:
SICFET N-CH 1200V 51A SOT227
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:235 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):273W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number APT80SM120J APT80SM120S  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 55mOhm @ 40A, 20V 55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 20 V 235 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) 273W (Tc) 625W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount Surface Mount
Supplier Device Package SOT-227 D3PAK
Package / Case SOT-227-4, miniBLOC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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