APT80SM120J
  • Share:

Microsemi Corporation APT80SM120J

Manufacturer No:
APT80SM120J
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT80SM120J Datasheet
ECAD Model:
-
Description:
SICFET N-CH 1200V 51A SOT227
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:235 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):273W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

-
92

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT80SM120J APT80SM120S  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 55mOhm @ 40A, 20V 55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 20 V 235 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) 273W (Tc) 625W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount Surface Mount
Supplier Device Package SOT-227 D3PAK
Package / Case SOT-227-4, miniBLOC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

STD100N3LF3
STD100N3LF3
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
IRF840
IRF840
Motorola
MOSFET N-CH 500V 8A TO220AB
UPA2732UT1A-E1-AY
UPA2732UT1A-E1-AY
Renesas Electronics America Inc
MOSFET P-CH 30V 40A 8DFN
IPSA70R600CEAKMA1
IPSA70R600CEAKMA1
Infineon Technologies
MOSFET N-CH 700V 10.5A TO251-3
IPD50R520CPATMA1
IPD50R520CPATMA1
Infineon Technologies
LOW POWER_LEGACY
STD95N04
STD95N04
STMicroelectronics
MOSFET N-CH 40V 80A DPAK
FQB3N25TM
FQB3N25TM
onsemi
MOSFET N-CH 250V 2.8A D2PAK
STF25NM60ND
STF25NM60ND
STMicroelectronics
MOSFET N-CH 600V 21A TO220FP
NTMFS4933NT3G
NTMFS4933NT3G
onsemi
MOSFET N-CH 30V 20A/210A 5DFN
AUIRFSL8408
AUIRFSL8408
Infineon Technologies
MOSFET N-CH 40V 195A TO262
IPB160N08S403ATMA1
IPB160N08S403ATMA1
Infineon Technologies
MOSFET N-CH 80V 160A TO263-7
RS3G160ATTB1
RS3G160ATTB1
Rohm Semiconductor
PCH -40V -16A POWER MOSFET - RS3

Related Product By Brand

1.5KE6.8CAE3/TR13
1.5KE6.8CAE3/TR13
Microsemi Corporation
TVS DIODE 5.8VWM 10.5VC CASE-1
MXLP5KE17CA
MXLP5KE17CA
Microsemi Corporation
TVS DIODE 17VWM 27.6VC DO204AL
MP5KE10A
MP5KE10A
Microsemi Corporation
TVS DIODE 10VWM 17VC DO204AL
MP5KE7.0CA
MP5KE7.0CA
Microsemi Corporation
TVS DIODE 7VWM 12VC DO204AL
1N5920DG
1N5920DG
Microsemi Corporation
DIODE ZENER 6.2V 1.25W DO204AL
JANTX1N4486DUS
JANTX1N4486DUS
Microsemi Corporation
DIODE ZENER 75V 1.5W D5A
2EZ8.2D5
2EZ8.2D5
Microsemi Corporation
DIODE ZENER 8.2V 2W DO204AL
1N5947BE3/TR13
1N5947BE3/TR13
Microsemi Corporation
DIODE ZENER 82V 1.5W DO204AL
1N5950BE3/TR13
1N5950BE3/TR13
Microsemi Corporation
DIODE ZENER 110V 1.5W DO204AL
2EZ75DE3/TR12
2EZ75DE3/TR12
Microsemi Corporation
DIODE ZENER 75V 2W DO204AL
3EZ30D5E3/TR8
3EZ30D5E3/TR8
Microsemi Corporation
DIODE ZENER 30V 3W DO204AL
1N4751 G
1N4751 G
Microsemi Corporation
DIODE ZENER 30V 1W DO204AL