Microsemi Corporation-APT75GN60B2DQ3G - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	155 A
Current - Collector Pulsed (Icm):	225 A
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 75A
Power - Max:	536 W
Switching Energy:	2500µJ (on), 2140µJ (off)
Input Type:	Standard
Gate Charge:	485 nC
Td (on/off) @ 25°C:	47ns/385ns
Test Condition:	400V, 75A, 1Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	-

Microsemi Corporation APT75GN60B2DQ3G