APT5SM170S
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Microsemi Corporation APT5SM170S

Manufacturer No:
APT5SM170S
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT5SM170S Datasheet
ECAD Model:
-
Description:
SICFET N-CH 1700V 4.6A D3PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number APT5SM170S APT5SM170B  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V 1700 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V 1.25Ohm @ 2.5A, 20V
Vgs(th) (Max) @ Id 3.2V @ 500µA 3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 20 V 21 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 1000 V 249 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) 52W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package D3PAK TO-247-3
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

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