APT5SM170S
  • Share:

Microsemi Corporation APT5SM170S

Manufacturer No:
APT5SM170S
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT5SM170S Datasheet
ECAD Model:
-
Description:
SICFET N-CH 1700V 4.6A D3PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
538

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT5SM170S APT5SM170B  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V 1700 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V 1.25Ohm @ 2.5A, 20V
Vgs(th) (Max) @ Id 3.2V @ 500µA 3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 20 V 21 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 1000 V 249 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) 52W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package D3PAK TO-247-3
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

Related Product By Categories

FDD3N40TM
FDD3N40TM
onsemi
MOSFET N-CH 400V 2A DPAK
IRLZ44PBF-BE3
IRLZ44PBF-BE3
Vishay Siliconix
MOSFET N-CH 60V 50A TO220AB
BUK6607-55C,118
BUK6607-55C,118
Nexperia USA Inc.
MOSFET N-CH 55V 100A D2PAK
PJA3405_R1_00001
PJA3405_R1_00001
Panjit International Inc.
SOT-23, MOSFET
STF6N80K5
STF6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A TO220FP
IPB60R099C7ATMA1
IPB60R099C7ATMA1
Infineon Technologies
MOSFET N-CH 650V 22A TO263-3
RM2304
RM2304
Rectron USA
MOSFET N-CHANNEL 30V 3.6A SOT23
DMN3025LFDF-7
DMN3025LFDF-7
Diodes Incorporated
MOSFET N-CH 30V 9.9A 6UDFN
DMP65H11D0HSS-13
DMP65H11D0HSS-13
Diodes Incorporated
MOSFET BVDSS: 501V~650V SO-8 T&R
FDP3651U
FDP3651U
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 8
IRL5602STRLPBF
IRL5602STRLPBF
Infineon Technologies
MOSFET P-CH 20V 24A D2PAK
RS1P600BETB1
RS1P600BETB1
Rohm Semiconductor
MOSFET N-CH 100V 17.5A/60A 8HSOP

Related Product By Brand

SMCJ5647A/TR13
SMCJ5647A/TR13
Microsemi Corporation
TVS DIODE 33.3VWM 53.9VC DO214AB
MXLP5KE110AE3
MXLP5KE110AE3
Microsemi Corporation
TVS DIODE 110VWM 177VC DO204AL
MXP5KE30CAE3
MXP5KE30CAE3
Microsemi Corporation
TVS DIODE 30VWM 48.4VC DO204AL
FST50100
FST50100
Microsemi Corporation
DIODE ARRAY SCHOTTKY 100V TO247
2EZ16D5
2EZ16D5
Microsemi Corporation
DIODE ZENER 16V 2W DO204AL
2EZ62D5E3/TR12
2EZ62D5E3/TR12
Microsemi Corporation
DIODE ZENER 62V 2W DO204AL
SMAJ6487CE3/TR13
SMAJ6487CE3/TR13
Microsemi Corporation
DIODE ZENER 3.9V 1.5W DO214AC
1N5949CPE3/TR8
1N5949CPE3/TR8
Microsemi Corporation
DIODE ZENER 100V 1.5W DO204AL
3EZ22D/TR8
3EZ22D/TR8
Microsemi Corporation
DIODE ZENER 22V 3W DO204AL
APTC60AM242G
APTC60AM242G
Microsemi Corporation
MOSFET 2N-CH 600V 95A SP2
EX64-TQ100I
EX64-TQ100I
Microsemi Corporation
IC FPGA 56 I/O 100TQFP
LX8554-00CDD
LX8554-00CDD
Microsemi Corporation
IC REG LIN POS ADJ 5A TO263 PWR