APT5SM170S
  • Share:

Microsemi Corporation APT5SM170S

Manufacturer No:
APT5SM170S
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT5SM170S Datasheet
ECAD Model:
-
Description:
SICFET N-CH 1700V 4.6A D3PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 1000 V
FET Feature:- 
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
0 Remaining View Similar

In Stock

-
538

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT5SM170S APT5SM170B  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V 1700 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V 1.25Ohm @ 2.5A, 20V
Vgs(th) (Max) @ Id 3.2V @ 500µA 3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 20 V 21 nC @ 20 V
Vgs (Max) +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 1000 V 249 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) 52W (Tc) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package D3PAK TO-247-3
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

Related Product By Categories

IRFB7546PBF
IRFB7546PBF
Infineon Technologies
MOSFET N-CH 60V 75A TO220AB
CSD18510KCS
CSD18510KCS
Texas Instruments
MOSFET N-CH 40V 200A TO220-3
SIDR392DP-T1-GE3
SIDR392DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 82A/100A PPAK
SUM90N10-8M2P-E3
SUM90N10-8M2P-E3
Vishay Siliconix
MOSFET N-CH 100V 90A TO263
IPB049N08N5ATMA1
IPB049N08N5ATMA1
Infineon Technologies
MOSFET N-CH 80V 80A D2PAK
SIHK075N60EF-T1GE3
SIHK075N60EF-T1GE3
Vishay Siliconix
E SERIES POWER MOSFET WITH FAST
IMBG120R350M1HXTMA1
IMBG120R350M1HXTMA1
Infineon Technologies
SICFET N-CH 1.2KV 4.7A TO263
IXTH270N04T4
IXTH270N04T4
IXYS
MOSFET N-CH 40V 270A TO247
NTP13N10
NTP13N10
onsemi
MOSFET N-CH 100V 13A TO220AB
FQI6N15TU
FQI6N15TU
onsemi
MOSFET N-CH 150V 6.4A I2PAK
IPD20N03L G
IPD20N03L G
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
R5011ANJTL
R5011ANJTL
Rohm Semiconductor
MOSFET N-CH 500V 11A LPTS

Related Product By Brand

SMCJ6037/TR13
SMCJ6037/TR13
Microsemi Corporation
TVS DIODE 6.5VWM 12.5VC DO214AB
CORE1553BRT-EBR-AN
CORE1553BRT-EBR-AN
Microsemi Corporation
IP MOD CORE1553 EBR ENH BIT RATE
APT30DS20HJ
APT30DS20HJ
Microsemi Corporation
BRIDGE RECT 1P 200V 45A SOT227
2EZ140DE3/TR12
2EZ140DE3/TR12
Microsemi Corporation
DIODE ZENER 140V 2W DO204AL
3EZ15D10/TR12
3EZ15D10/TR12
Microsemi Corporation
DIODE ZENER 15V 3W DO204AL
SMAJ4483CE3/TR13
SMAJ4483CE3/TR13
Microsemi Corporation
DIODE ZENER 56V 1.5W DO214AC
SMAJ4486E3/TR13
SMAJ4486E3/TR13
Microsemi Corporation
DIODE ZENER 75V 1.5W DO214AC
SMBJ5953A/TR13
SMBJ5953A/TR13
Microsemi Corporation
DIODE ZENER 150V 2W SMBJ
2EZ110D2E3/TR8
2EZ110D2E3/TR8
Microsemi Corporation
DIODE ZENER 110V 2W DO204AL
3EZ9.1D10/TR8
3EZ9.1D10/TR8
Microsemi Corporation
DIODE ZENER 9.1V 3W DO204AL
2N6766
2N6766
Microsemi Corporation
MOSFET N-CH 200V 30A TO3
SG2845M
SG2845M
Microsemi Corporation
IC REG CTRLR FLYBACK 8DIP