APT58MJ50J
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Microsemi Corporation APT58MJ50J

Manufacturer No:
APT58MJ50J
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT58MJ50J Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 58A ISOTOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:340 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:13500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):540W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:ISOTOP®
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number APT58MJ50J APT58M50J  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 42A, 10V 65mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 340 nC @ 10 V 340 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 13500 pF @ 25 V 13500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 540W (Tc) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package ISOTOP® ISOTOP®
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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