APT5518BFLLG
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Microsemi Corporation APT5518BFLLG

Manufacturer No:
APT5518BFLLG
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT5518BFLLG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 550V 31A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):550 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3286 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):403W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number APT5518BFLLG APT5018BFLLG  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V 500 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 180mOhm @ 15.5A, 10V 180mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 3286 pF @ 25 V 2596 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 403W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247 [B]
Package / Case TO-247-3 TO-247-3

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