APT5510JFLL
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Microsemi Corporation APT5510JFLL

Manufacturer No:
APT5510JFLL
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT5510JFLL Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 550V 44A ISOTOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):550 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5823 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):463W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:ISOTOP®
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number APT5510JFLL APT5010JFLL  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V 500 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 100mOhm @ 22A, 10V 100mOhm @ 20.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V 95 nC @ 10 V
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 5823 pF @ 25 V 4360 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 463W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package ISOTOP® ISOTOP®
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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