APT53N60SC6
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Microsemi Corporation APT53N60SC6

Manufacturer No:
APT53N60SC6
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT53N60SC6 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 53A D3PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs:154 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4020 pF @ 25 V
FET Feature:Super Junction
Power Dissipation (Max):417W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number APT53N60SC6 APT53N60BC6  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 53A (Tc) 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 25.8A, 10V 70mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.72mA 3.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs 154 nC @ 10 V 154 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4020 pF @ 25 V 4020 pF @ 25 V
FET Feature Super Junction -
Power Dissipation (Max) 417W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package D3PAK TO-247 [B]
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3

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