Microsemi Corporation-APT50M80B2VRG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	80mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:	4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:	423 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	8797 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Through Hole
Supplier Device Package:	T-MAX™ [B2]
Package / Case:	TO-247-3 Variant

Microsemi Corporation APT50M80B2VRG