Microsemi Corporation-APT50GT120B2RDLG - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	106 A
Current - Collector Pulsed (Icm):	150 A
Vce(on) (Max) @ Vge, Ic:	3.7V @ 15V, 50A
Power - Max:	694 W
Switching Energy:	3585µJ (on), 1910µJ (off)
Input Type:	Standard
Gate Charge:	240 nC
Td (on/off) @ 25°C:	23ns/215ns
Test Condition:	800V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Variant
Supplier Device Package:	-

Microsemi Corporation APT50GT120B2RDLG