APT50GS60BRDLG
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Microsemi Corporation APT50GS60BRDLG

Manufacturer No:
APT50GS60BRDLG
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT50GS60BRDLG Datasheet
ECAD Model:
-
Description:
IGBT 600V 93A 415W TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):93 A
Current - Collector Pulsed (Icm):195 A
Vce(on) (Max) @ Vge, Ic:3.15V @ 15V, 50A
Power - Max:415 W
Switching Energy:755µJ (off)
Input Type:Standard
Gate Charge:235 nC
Td (on/off) @ 25°C:16ns/225ns
Test Condition:400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
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In Stock

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425

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Similar Products

Part Number APT50GS60BRDLG APT30GS60BRDLG  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Active Active
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 93 A 54 A
Current - Collector Pulsed (Icm) 195 A 113 A
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 50A 3.15V @ 15V, 30A
Power - Max 415 W 250 W
Switching Energy 755µJ (off) 570µJ (off)
Input Type Standard Standard
Gate Charge 235 nC 145 nC
Td (on/off) @ 25°C 16ns/225ns 16ns/360ns
Test Condition 400V, 50A, 4.7Ohm, 15V 400V, 30A, 9.1Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 TO-247

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