APT47N65BC3G
  • Share:

Microsemi Corporation APT47N65BC3G

Manufacturer No:
APT47N65BC3G
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT47N65BC3G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 47A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7015 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):417W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 [B]
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
441

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT47N65BC3G APT47N60BC3G  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 30A, 10V 70mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V 260 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7015 pF @ 25 V 7015 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 417W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 [B] TO-247 [B]
Package / Case TO-247-3 TO-247-3

Related Product By Categories

IRFR9024NTRLPBF
IRFR9024NTRLPBF
Infineon Technologies
MOSFET P-CH 55V 11A DPAK
STP80N6F6
STP80N6F6
STMicroelectronics
MOSFET N-CH 60V 110A TO220
STD1NK60T4
STD1NK60T4
STMicroelectronics
MOSFET N-CH 600V 1A DPAK
SQJA20EP-T1_GE3
SQJA20EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 200V 22.5A PPAK SO-8
IPB407N30NATMA1
IPB407N30NATMA1
Infineon Technologies
MOSFET N-CH 300V 44A D2PAK
SIR608DP-T1-RE3
SIR608DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 45V 51A/208A PPAK
SVD5865NLT4G
SVD5865NLT4G
onsemi
MOSFET N-CH 60V 10A/46A DPAK
IPI47N10SL26AKSA1
IPI47N10SL26AKSA1
Infineon Technologies
MOSFET N-CH 100V 47A TO262-3
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
APT20M11JFLL
APT20M11JFLL
Microchip Technology
MOSFET N-CH 200V 176A ISOTOP
STI90N4F3
STI90N4F3
STMicroelectronics
MOSFET N-CH 40V 80A I2PAK
IPB80N06S2H5ATMA1
IPB80N06S2H5ATMA1
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3

Related Product By Brand

1N5947BG
1N5947BG
Microsemi Corporation
DIODE ZENER 82V 1.25W DO204AL
JANTX1N4468CUS
JANTX1N4468CUS
Microsemi Corporation
DIODE ZENER 13V 1.5W D5A
UZ836
UZ836
Microsemi Corporation
DIODE ZENER 36V 3W
1N5914P/TR8
1N5914P/TR8
Microsemi Corporation
DIODE ZENER 3.6V 1.5W DO204AL
1PMT5923C/TR7
1PMT5923C/TR7
Microsemi Corporation
DIODE ZENER 8.2V 3W DO216AA
2EZ180D5/TR8
2EZ180D5/TR8
Microsemi Corporation
DIODE ZENER 180V 2W DO204AL
2EZ91D5/TR8
2EZ91D5/TR8
Microsemi Corporation
DIODE ZENER 91V 2W DO204AL
3EZ6.2D5E3/TR8
3EZ6.2D5E3/TR8
Microsemi Corporation
DIODE ZENER 6.2V 3W DO204AL
1N5525B (DO35)
1N5525B (DO35)
Microsemi Corporation
DIODE ZENER 6.2V 500MW DO35
A1425A-1PQ100I
A1425A-1PQ100I
Microsemi Corporation
IC FPGA 80 I/O 100QFP
A54SX08A-FFGG144
A54SX08A-FFGG144
Microsemi Corporation
IC FPGA 111 I/O 144FBGA
M2GL100T-1FC1152
M2GL100T-1FC1152
Microsemi Corporation
IC FPGA 574 I/O 1152FCBGA