Microsemi Corporation-APT45GR65SSCD10 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	118 A
Current - Collector Pulsed (Icm):	224 A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 45A
Power - Max:	543 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	203 nC
Td (on/off) @ 25°C:	15ns/100ns
Test Condition:	433V, 45A, 4.3Ohm, 15V
Reverse Recovery Time (trr):	80 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D3PAK

Microsemi Corporation APT45GR65SSCD10