APT40M35JVFR
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Microsemi Corporation APT40M35JVFR

Manufacturer No:
APT40M35JVFR
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT40M35JVFR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 93A ISOTOP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:93A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:35mOhm @ 46.5A, 10V
Vgs(th) (Max) @ Id:4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:1065 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:20160 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:ISOTOP®
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number APT40M35JVFR APT40M35JVR  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 93A (Tc) 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 46.5A, 10V 35mOhm @ 46.5A, 10V
Vgs(th) (Max) @ Id 4V @ 5mA 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 1065 nC @ 10 V 1065 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 20160 pF @ 25 V 20160 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700W (Tc) 700W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package ISOTOP® SOT-227 (ISOTOP®)
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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