Microsemi Corporation-APT36N90BC3G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	900 V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	120mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs:	252 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7463 pF @ 25 V
FET Feature:	Super Junction
Power Dissipation (Max):	390W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247 [B]
Package / Case:	TO-247-3

Microsemi Corporation APT36N90BC3G