APT35SM70B
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Microsemi Corporation APT35SM70B

Manufacturer No:
APT35SM70B
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT35SM70B Datasheet
ECAD Model:
-
Description:
SICFET N-CH 700V 35A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:145mOhm @ 10A, 20V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1035 pF @ 700 V
FET Feature:- 
Power Dissipation (Max):176W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number APT35SM70B APT35SM70S  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A
Drive Voltage (Max Rds On, Min Rds On) 20V -
Rds On (Max) @ Id, Vgs 145mOhm @ 10A, 20V -
Vgs(th) (Max) @ Id 2.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 20 V -
Vgs (Max) +25V, -10V -
Input Capacitance (Ciss) (Max) @ Vds 1035 pF @ 700 V -
FET Feature - -
Power Dissipation (Max) 176W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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