APT34F60BG
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Microsemi Corporation APT34F60BG

Manufacturer No:
APT34F60BG
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT34F60BG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 34A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:210mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:165 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):624W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number APT34F60BG APT34F60B  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 17A, 10V 210mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V 165 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6640 pF @ 25 V 6640 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 624W (Tc) 624W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247 [B]
Package / Case TO-247-3 TO-247-3

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