APT33N90JCCU3
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Microsemi Corporation APT33N90JCCU3

Manufacturer No:
APT33N90JCCU3
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT33N90JCCU3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 33A SOT227
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):290W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number APT33N90JCCU3 APT33N90JCU3   APT33N90JCCU2  
Manufacturer Microsemi Corporation Microchip Technology Microsemi Corporation
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 33A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 26A, 10V 120mOhm @ 26A, 10V 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA 3.5V @ 3mA 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V 270 nC @ 10 V 270 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 100 V 6800 pF @ 100 V 6800 pF @ 100 V
FET Feature Super Junction Super Junction Super Junction
Power Dissipation (Max) 290W (Tc) 290W (Tc) 290W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227 SOT-227 SOT-227
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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