APT30SCD120B
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Microsemi Corporation APT30SCD120B

Manufacturer No:
APT30SCD120B
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT30SCD120B Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 1.2KV 99A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):99A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 30 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:600 µA @ 1200 V
Capacitance @ Vr, F:2100pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number APT30SCD120B APT30SCD120S   APT10SCD120B   APT20SCD120B  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete Obsolete Obsolete
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 99A (DC) 99A (DC) 36A (DC) 68A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 30 A 1.8 V @ 30 A 1.8 V @ 10 A 1.8 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 600 µA @ 1200 V 600 µA @ 1200 V 200 µA @ 1200 V 400 µA @ 1200 V
Capacitance @ Vr, F 2100pF @ 0V, 1MHz 2100pF @ 0V, 1MHz 600pF @ 0V, 1MHz 1135pF @ 0V, 1MHz
Mounting Type Through Hole Surface Mount Through Hole -
Package / Case TO-247-2 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-2 -
Supplier Device Package TO-247 D3PAK TO-247 -
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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