APT30SCD120B
  • Share:

Microsemi Corporation APT30SCD120B

Manufacturer No:
APT30SCD120B
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT30SCD120B Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 1.2KV 99A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):99A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 30 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:600 µA @ 1200 V
Capacitance @ Vr, F:2100pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
591

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT30SCD120B APT30SCD120S   APT10SCD120B   APT20SCD120B  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete Obsolete Obsolete
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 99A (DC) 99A (DC) 36A (DC) 68A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 30 A 1.8 V @ 30 A 1.8 V @ 10 A 1.8 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 600 µA @ 1200 V 600 µA @ 1200 V 200 µA @ 1200 V 400 µA @ 1200 V
Capacitance @ Vr, F 2100pF @ 0V, 1MHz 2100pF @ 0V, 1MHz 600pF @ 0V, 1MHz 1135pF @ 0V, 1MHz
Mounting Type Through Hole Surface Mount Through Hole -
Package / Case TO-247-2 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-2 -
Supplier Device Package TO-247 D3PAK TO-247 -
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

ES1A-LTP
ES1A-LTP
Micro Commercial Co
DIODE GEN PURP 50V 1A DO214AC
RHRP8120-F102
RHRP8120-F102
onsemi
DIODE GEN PURP 1.2KV 8A TO220-2
S1PG-M3/84A
S1PG-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO220AA
UF3A_R1_00001
UF3A_R1_00001
Panjit International Inc.
SURFACE MOUNT ULTRA FAST RECTIFI
1N2154R
1N2154R
Solid State Inc.
DO5 40 AMP SILICON RECTFIER
VS-1N3208
VS-1N3208
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 15A DO203AB
1N4006RL
1N4006RL
onsemi
DIODE GEN PURP 800V 1A DO41
EGP10BEHE3/54
EGP10BEHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
SS19-E3/5AT
SS19-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 1A DO214AC
DTV56L-E3/45
DTV56L-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.5KV 10A TO220AC
SBYV26CHM3/73
SBYV26CHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
SDM10K45-7-F-79
SDM10K45-7-F-79
Diodes Incorporated
DIODE SCHOTTKY 45V 100MA SOD323

Related Product By Brand

SMCJ5644E3/TR13
SMCJ5644E3/TR13
Microsemi Corporation
TVS DIODE 24.3VWM 43.5VC DO214AB
SMCJ6048AE3/TR13
SMCJ6048AE3/TR13
Microsemi Corporation
TVS DIODE 20VWM 33.2VC DO214AB
3EZ43D2E3/TR12
3EZ43D2E3/TR12
Microsemi Corporation
DIODE ZENER 43V 3W DO204AL
1N5946BPE3/TR8
1N5946BPE3/TR8
Microsemi Corporation
DIODE ZENER 75V 1.5W DO204AL
3EZ100D10/TR8
3EZ100D10/TR8
Microsemi Corporation
DIODE ZENER 100V 3W DO204AL
3EZ36DE3/TR8
3EZ36DE3/TR8
Microsemi Corporation
DIODE ZENER 36V 3W DO204AL
A54SX16-1VQ100
A54SX16-1VQ100
Microsemi Corporation
IC FPGA 81 I/O 100VQFP
A54SX16-1VQG100
A54SX16-1VQG100
Microsemi Corporation
IC FPGA 81 I/O 100VQFP
A3P250L-1VQG100I
A3P250L-1VQG100I
Microsemi Corporation
IC FPGA 68 I/O 100VQFP
A54SX32A-2FG144I
A54SX32A-2FG144I
Microsemi Corporation
IC FPGA 111 I/O 144FBGA
LX1553CDM
LX1553CDM
Microsemi Corporation
IC REG CTRLR BUCK/BOOST 8SOIC
LXMG1614E-14-11
LXMG1614E-14-11
Microsemi Corporation
MOD INVERTER CCFL DGTL DUAL OUT