APT30N60KC6
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Microsemi Corporation APT30N60KC6

Manufacturer No:
APT30N60KC6
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT30N60KC6 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 30A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2267 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):219W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 [K]
Package / Case:TO-220-3
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Similar Products

Part Number APT30N60KC6 APT30N60SC6   APT30N60BC6  
Manufacturer Microsemi Corporation Microsemi Corporation Microchip Technology
Product Status Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 14.5A, 10V 125mOhm @ 14.5A, 10V 125mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 960µA 3.5V @ 960µA 3.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V 88 nC @ 10 V 88 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2267 pF @ 25 V 2267 pF @ 25 V 2267 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 219W (Tc) 219W (Tc) 219W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package TO-220 [K] D3PAK TO-247 [B]
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3

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