APT30DQ100BCTG
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Microsemi Corporation APT30DQ100BCTG

Manufacturer No:
APT30DQ100BCTG
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT30DQ100BCTG Datasheet
ECAD Model:
-
Description:
DIODE ARRAY GP 1000V 30A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io) (per Diode):30A
Voltage - Forward (Vf) (Max) @ If:3 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):295 ns
Current - Reverse Leakage @ Vr:100 µA @ 1000 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247 [B]
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Similar Products

Part Number APT30DQ100BCTG APT30DQ120BCTG   APT40DQ100BCTG   APT30D100BCTG  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology
Product Status Obsolete Active Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1200 V 1000 V 1000 V
Current - Average Rectified (Io) (per Diode) 30A 30A 40A 30A
Voltage - Forward (Vf) (Max) @ If 3 V @ 30 A 3.3 V @ 30 A 3 V @ 40 A 2.3 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 295 ns 320 ns 250 ns 290 ns
Current - Reverse Leakage @ Vr 100 µA @ 1000 V 100 µA @ 1200 V 100 µA @ 1000 V 250 µA @ 1000 V
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247 [B] TO-247 [B] TO-247 [B] TO-247 [B]

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