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| Part Number | APT2X21DC60J | APT2X41DC60J | APT2X61DC60J | APT2X31DC60J | APT2X51DC60J | APT2X20DC60J |
|---|---|---|---|---|---|---|
| Manufacturer | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation |
| Product Status | Active | Active | Active | Active | Active | Active |
| Diode Configuration | 2 Independent | 2 Independent | 2 Independent | 2 Independent | 2 Independent | 2 Independent |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Current - Average Rectified (Io) (per Diode) | 20A | 40A | 60A | 30A | 50A | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A | 1.8 V @ 40 A | 1.8 V @ 60 A | 1.8 V @ 30 A | 1.8 V @ 50 A | 1.8 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 400 µA @ 600 V | 800 µA @ 600 V | 1.2 mA @ 600 V | 600 µA @ 600 V | 1 mA @ 600 V | 400 µA @ 600 V |
| Operating Temperature - Junction | -55°C ~ 175°C | - | - | - | - | -55°C ~ 175°C |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Package / Case | ISOTOP | ISOTOP | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | ISOTOP |
| Supplier Device Package | SOT-227 | SOT-227 | ISOTOP® | SOT-227 | SOT-227 | SOT-227 |
