APT23F60S
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Microsemi Corporation APT23F60S

Manufacturer No:
APT23F60S
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT23F60S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 24A D3PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4415 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):415W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number APT23F60S APT28F60S   APT23F60B  
Manufacturer Microsemi Corporation Microsemi Corporation Microchip Technology
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 30A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 11A, 10V 220mOhm @ 14A, 10V 290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 140 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4415 pF @ 25 V 5575 pF @ 25 V 4415 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 415W (Tc) 520W (Tc) 415W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package D3PAK D3PAK TO-247 [B]
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

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