APT20N60BC3G
  • Share:

Microsemi Corporation APT20N60BC3G

Manufacturer No:
APT20N60BC3G
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT20N60BC3G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20.7A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
311

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT20N60BC3G APT20N60SC3G  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 114 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2440 pF @ 25 V 2440 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-247-3 D3PAK
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Product By Categories

NTJS4151PT1G
NTJS4151PT1G
onsemi
MOSFET P-CH 20V 3.3A SC88/SC70-6
BSC026N02KSGAUMA1
BSC026N02KSGAUMA1
Infineon Technologies
MOSFET N-CH 20V 25A/100A TDSON
DMN10H170SVT-7
DMN10H170SVT-7
Diodes Incorporated
MOSFET N-CH 100V 2.6A TSOT26
ZVN4210GTA
ZVN4210GTA
Diodes Incorporated
MOSFET N-CH 100V 800MA SOT223
RF1S70N06
RF1S70N06
Harris Corporation
MOSFET N-CH 60V 70A I2PAK
SSM3K16CTC,L3F
SSM3K16CTC,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 200MA CST3C
IPI90N06S4L04AKSA2
IPI90N06S4L04AKSA2
Infineon Technologies
MOSFET N-CH 60V 90A TO262-3
IRLI2505
IRLI2505
Infineon Technologies
MOSFET N-CH 55V 58A TO220AB FP
STW16NK60Z
STW16NK60Z
STMicroelectronics
MOSFET N-CH 600V 14A TO247-3
IPB80N04S403JEATMA1
IPB80N04S403JEATMA1
Infineon Technologies
MOSFET N-CH 40V 80A TO263-3-2
BUK9515-60E,127
BUK9515-60E,127
NXP USA Inc.
MOSFET N-CH 60V 54A TO220AB
RUS100N02TB
RUS100N02TB
Rohm Semiconductor
MOSFET N-CH 20V 10A 8SOP

Related Product By Brand

SMCJ5648E3/TR13
SMCJ5648E3/TR13
Microsemi Corporation
TVS DIODE 34.8VWM 61.9VC DO214AB
MXLP5KE150CAE3
MXLP5KE150CAE3
Microsemi Corporation
TVS DIODE 150VWM 243VC DO204AL
MXP5KE7.5CAE3
MXP5KE7.5CAE3
Microsemi Corporation
TVS DIODE 7.5VWM 12.9VC DO204AL
MAP5KE8.5A
MAP5KE8.5A
Microsemi Corporation
TVS DIODE 8.5VWM 14.4VC DO204AL
2EZ51D5DO41E3
2EZ51D5DO41E3
Microsemi Corporation
DIODE ZENER 51V 2W DO204AL
1N5913BP/TR12
1N5913BP/TR12
Microsemi Corporation
DIODE ZENER 3.3V 1.5W DO204AL
2EZ160D2E3/TR12
2EZ160D2E3/TR12
Microsemi Corporation
DIODE ZENER 160V 2W DO204AL
2EZ11D5E3/TR8
2EZ11D5E3/TR8
Microsemi Corporation
DIODE ZENER 11V 2W DO204AL
2EZ19D5/TR8
2EZ19D5/TR8
Microsemi Corporation
DIODE ZENER 19V 2W DO204AL
2EZ3.9D2E3/TR8
2EZ3.9D2E3/TR8
Microsemi Corporation
DIODE ZENER 3.9V 2W DO204AL
A42MX16-1TQ176
A42MX16-1TQ176
Microsemi Corporation
IC FPGA 140 I/O 176TQFP
A3P250L-FG256
A3P250L-FG256
Microsemi Corporation
IC FPGA 157 I/O 256FBGA