APT20M22B2VRG
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Microsemi Corporation APT20M22B2VRG

Manufacturer No:
APT20M22B2VRG
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT20M22B2VRG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 100A T-MAX
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:435 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:T-MAX™ [B2]
Package / Case:TO-247-3 Variant
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Similar Products

Part Number APT20M22B2VRG APT20M22B2VFRG  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 500mA, 10V 22mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 435 nC @ 10 V 435 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 10200 pF @ 25 V 10200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package T-MAX™ [B2] T-MAX™ [B2]
Package / Case TO-247-3 Variant TO-247-3 Variant

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