Microsemi Corporation-APT20GF120BRDQ1G - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	36 A
Current - Collector Pulsed (Icm):	64 A
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 15A
Power - Max:	200 W
Switching Energy:	895µJ (on), 840µJ (off)
Input Type:	Standard
Gate Charge:	100 nC
Td (on/off) @ 25°C:	10ns/120ns
Test Condition:	800V, 15A, 4.3Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 [B]

Microsemi Corporation APT20GF120BRDQ1G