APT18M80S
  • Share:

Microsemi Corporation APT18M80S

Manufacturer No:
APT18M80S
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT18M80S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 19A D3PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
341

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT18M80S APT18M80B  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 9A, 10V 530mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3760 pF @ 25 V 3760 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package D3PAK TO-247 [B]
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-3

Related Product By Categories

2SK1459LS
2SK1459LS
onsemi
N-CHANNEL SILICON MOSFET
FDMS86105
FDMS86105
onsemi
MOSFET N-CH 100V 6A/26A 8PQFN
IPB019N08N3GATMA1
IPB019N08N3GATMA1
Infineon Technologies
MOSFET N-CH 80V 180A TO263-7
IRFR210TRPBF
IRFR210TRPBF
Vishay Siliconix
MOSFET N-CH 200V 2.6A DPAK
IXFP72N30X3M
IXFP72N30X3M
IXYS
MOSFET N-CH 300V 72A TO220
NVMFS5C646NLAFT1G
NVMFS5C646NLAFT1G
onsemi
MOSFET N-CH 60V 20A/93A 5DFN
XP152A11E5MR-G
XP152A11E5MR-G
Torex Semiconductor Ltd
MOSFET P-CH 30V 700MA SOT23
AOD8N25
AOD8N25
Alpha & Omega Semiconductor Inc.
MOSFET N CH 250V 8A TO252
IPP086N10N3G
IPP086N10N3G
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 8
IRL3715S
IRL3715S
Infineon Technologies
MOSFET N-CH 20V 54A D2PAK
IRF3315PBF
IRF3315PBF
Infineon Technologies
MOSFET N-CH 150V 23A TO220AB
IXFN55N50
IXFN55N50
IXYS
MOSFET N-CH 500V 55A SOT-227B

Related Product By Brand

MP5KE36AE3
MP5KE36AE3
Microsemi Corporation
TVS DIODE 36VWM 58.1VC DO204AL
VJ247M
VJ247M
Microsemi Corporation
BRIDGE RECT 1PHASE 250V 10A VJ
SMAJ5948BE3/TR13
SMAJ5948BE3/TR13
Microsemi Corporation
DIODE ZENER 91V 3W DO214AC
1EZ140D10E3/TR8
1EZ140D10E3/TR8
Microsemi Corporation
DIODE ZENER 140V 1W DO204AL
1N5949BPE3/TR8
1N5949BPE3/TR8
Microsemi Corporation
DIODE ZENER 100V 1.5W DO204AL
2EZ47D5E3/TR8
2EZ47D5E3/TR8
Microsemi Corporation
DIODE ZENER 47V 2W DO204AL
2EZ68DE3/TR8
2EZ68DE3/TR8
Microsemi Corporation
DIODE ZENER 68V 2W DO204AL
3EZ4.3DE3/TR8
3EZ4.3DE3/TR8
Microsemi Corporation
DIODE ZENER 4.3V 3W DO204AL
A3PE600-2PQG208
A3PE600-2PQG208
Microsemi Corporation
IC FPGA 147 I/O 208QFP
A42MX36-PQG240
A42MX36-PQG240
Microsemi Corporation
IC FPGA 202 I/O 240QFP
LE88216DLCT
LE88216DLCT
Microsemi Corporation
IC TELECOM INTERFACE 80LQFP
LX8117A-25CST
LX8117A-25CST
Microsemi Corporation
IC REG LIN 2.5V 1A SOT223 POWER