Microsemi Corporation-APT11GP60BDQBG - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	41 A
Current - Collector Pulsed (Icm):	45 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 11A
Power - Max:	187 W
Switching Energy:	46µJ (on), 90µJ (off)
Input Type:	Standard
Gate Charge:	40 nC
Td (on/off) @ 25°C:	7ns/29ns
Test Condition:	400V, 11A, 5Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

Microsemi Corporation APT11GP60BDQBG