Microsemi Corporation-APT11GF120BRDQ1G - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	25 A
Current - Collector Pulsed (Icm):	24 A
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 8A
Power - Max:	156 W
Switching Energy:	300µJ (on), 285µJ (off)
Input Type:	Standard
Gate Charge:	65 nC
Td (on/off) @ 25°C:	7ns/100ns
Test Condition:	800V, 8A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 [B]

Microsemi Corporation APT11GF120BRDQ1G