APT11F80S
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Microsemi Corporation APT11F80S

Manufacturer No:
APT11F80S
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT11F80S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 12A D3PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2471 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):337W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D3PAK
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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Similar Products

Part Number APT11F80S APT17F80S   APT11F80B  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 18A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 6A, 10V 580mOhm @ 9A, 10V 900mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 122 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2471 pF @ 25 V 3757 pF @ 25 V 2471 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 337W (Tc) 500W (Tc) 337W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Through Hole
Supplier Device Package D3PAK D3PAK TO-247 [B]
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

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