APT10SCE170B
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Microsemi Corporation APT10SCE170B

Manufacturer No:
APT10SCE170B
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT10SCE170B Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 1700V 10A TO247
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1700 V
Current - Average Rectified (Io):23A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1700 V
Capacitance @ Vr, F:1120pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number APT10SCE170B APT10SCE120B  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1700 V 1200 V
Current - Average Rectified (Io) 23A (DC) 43A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A 1.8 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1700 V 200 µA @ 1200 V
Capacitance @ Vr, F 1120pF @ 0V, 1MHz 630pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case TO-247-2 TO-247-2
Supplier Device Package TO-247 TO-247
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

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