APT10SCD65K
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Microsemi Corporation APT10SCD65K

Manufacturer No:
APT10SCD65K
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT10SCD65K Datasheet
ECAD Model:
-
Description:
DIODE SILICON 650V 17A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):17A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220 [K]
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number APT10SCD65K APT20SCD65K  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V
Current - Average Rectified (Io) 17A 32A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A 1.8 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 400 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz 680pF @ 100mV, 1MHz
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package TO-220 [K] TO-220 [K]
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

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