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| Part Number | APT10SCD120B | APT10SCD120K | APT30SCD120B | APT20SCD120B | APT10SCE120B |
|---|---|---|---|---|---|
| Manufacturer | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Current - Average Rectified (Io) | 36A (DC) | 10A | 99A (DC) | 68A (DC) | 43A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A | 1.5 V @ 10 A | 1.8 V @ 30 A | 1.8 V @ 20 A | 1.8 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V | - | 600 µA @ 1200 V | 400 µA @ 1200 V | 200 µA @ 1200 V |
| Capacitance @ Vr, F | 600pF @ 0V, 1MHz | - | 2100pF @ 0V, 1MHz | 1135pF @ 0V, 1MHz | 630pF @ 1V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole | - | Through Hole |
| Package / Case | TO-247-2 | TO-220-2 | TO-247-2 | - | TO-247-2 |
| Supplier Device Package | TO-247 | TO-220 [K] | TO-247 | - | TO-247 |
| Operating Temperature - Junction | -55°C ~ 150°C | - | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 175°C |
