APT10M11JVR
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Microsemi Corporation APT10M11JVR

Manufacturer No:
APT10M11JVR
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT10M11JVR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 144A ISOTOP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:144A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:450 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):450W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:ISOTOP®
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number APT10M11JVR APT20M11JVR   APT10M11JVFR  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 144A (Tc) 175A (Tc) 144A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs - 11mOhm @ 500mA, 10V 11mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA 4V @ 5mA 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 450 nC @ 10 V 180 nC @ 10 V 450 nC @ 10 V
Vgs (Max) ±30V ±30V -
Input Capacitance (Ciss) (Max) @ Vds 10300 pF @ 25 V 21600 pF @ 25 V 10380 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 450W (Tc) 700W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package ISOTOP® ISOTOP® ISOTOP®
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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