APT10M07JVR
  • Share:

Microsemi Corporation APT10M07JVR

Manufacturer No:
APT10M07JVR
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
APT10M07JVR Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 225A ISOTOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:225A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:1050 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:21600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:ISOTOP®
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

-
39

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT10M07JVR APT10M07JVFR  
Manufacturer Microsemi Corporation Microchip Technology
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 225A (Tc) 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs - 7mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 5mA 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 1050 nC @ 10 V 1050 nC @ 10 V
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 21600 pF @ 25 V 21600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package ISOTOP® ISOTOP®
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

SIHB100N60E-GE3
SIHB100N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 30A D2PAK
PHB110NQ08T,118
PHB110NQ08T,118
NXP USA Inc.
MOSFET N-CH 75V 75A D2PAK
BSC059N04LSGATMA1
BSC059N04LSGATMA1
Infineon Technologies
MOSFET N-CH 40V 16A/73A TDSON
SIR871DP-T1-GE3
SIR871DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 100V 48A PPAK SO-8
SUD09P10-195-BE3
SUD09P10-195-BE3
Vishay Siliconix
MOSFET P-CH 100V 8.8A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
SQJA20EP-T1_BE3
SQJA20EP-T1_BE3
Vishay Siliconix
N-CHANNEL 200-V (D-S) 175C MOSFE
NVMFS5C450NWFAFT1G
NVMFS5C450NWFAFT1G
onsemi
MOSFET N-CH 40V 24A/102A 5DFN
FQPF50N06L
FQPF50N06L
onsemi
MOSFET N-CH 60V 32.6A TO220F
IPD65R600E6BTMA1
IPD65R600E6BTMA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO252-3
STT7P2UH7
STT7P2UH7
STMicroelectronics
MOSFET P-CH 20V 7A SOT23-6
RSS065N06FU6TB
RSS065N06FU6TB
Rohm Semiconductor
MOSFET N-CH 60V 6.5A 8SOP

Related Product By Brand

MXP5KE110AE3
MXP5KE110AE3
Microsemi Corporation
TVS DIODE 110VWM 177VC DO204AL
MAP5KE51AE3
MAP5KE51AE3
Microsemi Corporation
TVS DIODE 51VWM 82.4VC DO204AL
1N5948AP/TR12
1N5948AP/TR12
Microsemi Corporation
DIODE ZENER 91V 1.5W DO204AL
1PMT5920AE3/TR7
1PMT5920AE3/TR7
Microsemi Corporation
DIODE ZENER 6.2V 3W DO216AA
2EZ150D/TR8
2EZ150D/TR8
Microsemi Corporation
DIODE ZENER 150V 2W DO204AL
3EZ10D10E3/TR8
3EZ10D10E3/TR8
Microsemi Corporation
DIODE ZENER 10V 3W DO204AL
3EZ17D5E3/TR8
3EZ17D5E3/TR8
Microsemi Corporation
DIODE ZENER 17V 3W DO204AL
MSFC110-16
MSFC110-16
Microsemi Corporation
POWER MOD THYRISTOR/DIODE F1
A54SX08A-2PQG208
A54SX08A-2PQG208
Microsemi Corporation
IC FPGA 130 I/O 208QFP
A54SX08A-FPQG208
A54SX08A-FPQG208
Microsemi Corporation
IC FPGA 130 I/O 208QFP
A54SX08A-FG144
A54SX08A-FG144
Microsemi Corporation
IC FPGA 111 I/O 144FBGA
AGL015V5-QNG68
AGL015V5-QNG68
Microsemi Corporation
IC FPGA 49 I/O 68QFN