APT10035B2LLG
  • Share:

Microsemi Corporation APT10035B2LLG

Manufacturer No:
APT10035B2LLG
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT10035B2LLG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 28A T-MAX
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:186 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5185 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):690W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:T-MAX™ [B2]
Package / Case:TO-247-3 Variant
0 Remaining View Similar

In Stock

-
455

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT10035B2LLG APT10045B2LLG   APT10035B2FLLG  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 23A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 14A, 10V 450mOhm @ 11.5A, 10V 370mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 5V @ 2.5mA 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V 154 nC @ 10 V 186 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5185 pF @ 25 V 4350 pF @ 25 V 5185 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 690W (Tc) 565W (Tc) 690W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package T-MAX™ [B2] T-MAX™ [B2] T-MAX™ [B2]
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant

Related Product By Categories

BSC034N10LS5ATMA1
BSC034N10LS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 19A/100A TDSON
SSM3K337R,LF
SSM3K337R,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 38V 2A SOT23F
NTBGS1D5N06C
NTBGS1D5N06C
onsemi
POWER MOSFET, 60 V, 1.62 M?, 267
IXTA200N055T2
IXTA200N055T2
IXYS
MOSFET N-CH 55V 200A TO263
BTS115AE6327
BTS115AE6327
Infineon Technologies
N-CHANNEL POWER MOSFET
SIHP5N50D-E3
SIHP5N50D-E3
Vishay Siliconix
MOSFET N-CH 500V 5.3A TO220AB
STP27N60M2-EP
STP27N60M2-EP
STMicroelectronics
MOSFET N-CH 600V 20A TO220
APT10035LFLLG
APT10035LFLLG
Microchip Technology
MOSFET N-CH 1000V 28A TO264
NTD4905N-1G
NTD4905N-1G
onsemi
MOSFET N-CH 30V 12A/67A IPAK
SFT1342-W
SFT1342-W
onsemi
MOSFET P-CH 60V 12A TP
AUIRFU8403
AUIRFU8403
Infineon Technologies
MOSFET N-CH 40V 100A IPAK
SCT3030ALHRC11
SCT3030ALHRC11
Rohm Semiconductor
SICFET N-CH 650V 70A TO247N

Related Product By Brand

1.5KE24AE3/TR13
1.5KE24AE3/TR13
Microsemi Corporation
TVS DIODE 20.5VWM 33.2VC CASE-1
1N5943DG
1N5943DG
Microsemi Corporation
DIODE ZENER 56V 1.25W DO204AL
JANTX1N4460CUS
JANTX1N4460CUS
Microsemi Corporation
DIODE ZENER 6.2V 1.5W D5A
JANTX1N4492DUS
JANTX1N4492DUS
Microsemi Corporation
DIODE ZENER 130V 1.5W D5A
1EZ120D5E3/TR12
1EZ120D5E3/TR12
Microsemi Corporation
DIODE ZENER 120V 1W DO204AL
1N5956E3/TR13
1N5956E3/TR13
Microsemi Corporation
DIODE ZENER 200V 1.5W DO204AL
2EZ30D5/TR12
2EZ30D5/TR12
Microsemi Corporation
DIODE ZENER 30V 2W DO204AL
3EZ14D10/TR12
3EZ14D10/TR12
Microsemi Corporation
DIODE ZENER 14V 3W DO204AL
3EZ120D10E3/TR8
3EZ120D10E3/TR8
Microsemi Corporation
DIODE ZENER 120V 3W DO204AL
A54SX32A-FGG144M
A54SX32A-FGG144M
Microsemi Corporation
IC FPGA 111 I/O 144FBGA
LE75183BDSCT
LE75183BDSCT
Microsemi Corporation
IC TELECOM INTERFACE 20SOIC
LX8384-00IDD
LX8384-00IDD
Microsemi Corporation
IC REG CONV 1OUT ADJ 5A TO263