APT10035B2LLG
  • Share:

Microsemi Corporation APT10035B2LLG

Manufacturer No:
APT10035B2LLG
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT10035B2LLG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 28A T-MAX
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:186 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5185 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):690W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:T-MAX™ [B2]
Package / Case:TO-247-3 Variant
0 Remaining View Similar

In Stock

-
455

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT10035B2LLG APT10045B2LLG   APT10035B2FLLG  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 23A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 14A, 10V 450mOhm @ 11.5A, 10V 370mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 5V @ 2.5mA 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V 154 nC @ 10 V 186 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5185 pF @ 25 V 4350 pF @ 25 V 5185 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 690W (Tc) 565W (Tc) 690W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package T-MAX™ [B2] T-MAX™ [B2] T-MAX™ [B2]
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant

Related Product By Categories

NTK3043NT1H
NTK3043NT1H
onsemi
NFET SOT723 20V 285MA 3.5
STR2N2VH5
STR2N2VH5
STMicroelectronics
MOSFET N-CH 20V 2.3A SOT23
TK4R1A10PL,S4X
TK4R1A10PL,S4X
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
PSMN1R5-50YLHX
PSMN1R5-50YLHX
Nexperia USA Inc.
PSMN1R5-50YLH/SOT1023/4 LEADS
ISC030N10NM6ATMA1
ISC030N10NM6ATMA1
Infineon Technologies
TRENCH >=100V PG-TDSON-8
IRF720STRRPBF
IRF720STRRPBF
Vishay Siliconix
MOSFET N-CH 400V 3.3A D2PAK
YJL03G10A-F2-0000HF
YJL03G10A-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 100V 3A SOT-23-3L
IRLI2505
IRLI2505
Infineon Technologies
MOSFET N-CH 55V 58A TO220AB FP
IRF3711ZCL
IRF3711ZCL
Infineon Technologies
MOSFET N-CH 20V 92A TO262
IRF6638TRPBF
IRF6638TRPBF
Infineon Technologies
MOSFET N-CH 30V 25A DIRECTFET
IRF1902GPBF
IRF1902GPBF
Infineon Technologies
MOSFET N-CH 20V 4.2A 8SO
RF4E100AJTCR
RF4E100AJTCR
Rohm Semiconductor
MOSFET N-CH 30V 10A HUML2020L8

Related Product By Brand

MAP5KE100CA
MAP5KE100CA
Microsemi Corporation
TVS DIODE 100VWM 162VC DO204AL
JANTXV1N6623U
JANTXV1N6623U
Microsemi Corporation
DIODE GEN PURP 800V 1A A-MELF
1N5922CG
1N5922CG
Microsemi Corporation
DIODE ZENER 7.5V 1.25W DO204AL
1N5248C
1N5248C
Microsemi Corporation
DIODE ZENER 18V 500MW DO35
1EZ150D5E3/TR12
1EZ150D5E3/TR12
Microsemi Corporation
DIODE ZENER 150V 1W DO204AL
1N5954APE3/TR12
1N5954APE3/TR12
Microsemi Corporation
DIODE ZENER 160V 1.5W DO204AL
2EZ7.5DE3/TR12
2EZ7.5DE3/TR12
Microsemi Corporation
DIODE ZENER 7.5V 2W DO204AL
SMBJ5355C/TR13
SMBJ5355C/TR13
Microsemi Corporation
DIODE ZENER 18V 5W SMBJ
SZL2.0A
SZL2.0A
Microsemi Corporation
DIODE ZENER 2V 500MW UB
A1010B-2PL44C
A1010B-2PL44C
Microsemi Corporation
IC FPGA 34 I/O 44PLCC
MPF300XT-FCG784I
MPF300XT-FCG784I
Microsemi Corporation
IC FPGA 388 I/O 784FCBGA
LXMG1618A-05-42
LXMG1618A-05-42
Microsemi Corporation
MOD INVERTER CCFL 4W 5V PROG