APT10035B2LLG
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Microsemi Corporation APT10035B2LLG

Manufacturer No:
APT10035B2LLG
Manufacturer:
Microsemi Corporation
Package:
Tube
Datasheet:
APT10035B2LLG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 28A T-MAX
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:186 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5185 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):690W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:T-MAX™ [B2]
Package / Case:TO-247-3 Variant
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Similar Products

Part Number APT10035B2LLG APT10045B2LLG   APT10035B2FLLG  
Manufacturer Microsemi Corporation Microchip Technology Microchip Technology
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 23A (Tc) 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 14A, 10V 450mOhm @ 11.5A, 10V 370mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 5V @ 2.5mA 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V 154 nC @ 10 V 186 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5185 pF @ 25 V 4350 pF @ 25 V 5185 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 690W (Tc) 565W (Tc) 690W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package T-MAX™ [B2] T-MAX™ [B2] T-MAX™ [B2]
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant

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