2N6800
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Microsemi Corporation 2N6800

Manufacturer No:
2N6800
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6800 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 3A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):800mW (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AF Metal Can
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Similar Products

Part Number 2N6800 2N6802  
Manufacturer Microsemi Corporation Microsemi Corporation
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2A, 10V 1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.75 nC @ 10 V 4.46 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) 800mW (Ta), 25W (Tc) 800mW (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-39 TO-39 (TO-205AD)
Package / Case TO-205AF Metal Can TO-205AD, TO-39-3 Metal Can

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