2N6796
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Microsemi Corporation 2N6796

Manufacturer No:
2N6796
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6796 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 8A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs:6.34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):800mW (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AF Metal Can
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Similar Products

Part Number 2N6796 2N6798   2N6756   2N6766   2N6786   2N6790   2N6792  
Manufacturer Microsemi Corporation Microsemi Corporation Harris Corporation Microsemi Corporation Harris Corporation Microsemi Corporation Harris Corporation
Product Status Obsolete Obsolete Active Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V 200 V 400 V 200 V 400 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 5.5A (Tc) 14A (Tc) 30A (Tc) 1.25A (Tc) 3.5A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 10V 400mOhm @ 3.5A, 10V 210mOhm @ 14A, 10V 90mOhm @ 30A, 10V 3.7Ohm @ 1.25A, 10V 800mOhm @ 2.25A, 10V 1.8Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.34 nC @ 10 V 5.29 nC @ 10 V 35 nC @ 10 V 115 nC @ 10 V 12 nC @ 10 V 14.3 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - - - - 170 pF @ 25 V - 600 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 800mW (Ta), 25W (Tc) 800mW (Ta), 25W (Tc) 4W (Ta), 75W (Tc) 4W (Ta), 150W (Tc) 15W (Tc) 800mW (Tc) 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-39 TO-39 TO-204AA TO-3 TO-205AF (TO-39) TO-39 TO-205AF (TO-39)
Package / Case TO-205AF Metal Can TO-205AF Metal Can TO-204AA, TO-3 TO-204AE TO-205AF Metal Can TO-205AF Metal Can TO-205AF Metal Can

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