2N6796
  • Share:

Microsemi Corporation 2N6796

Manufacturer No:
2N6796
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6796 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 8A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs:6.34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):800mW (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AF Metal Can
0 Remaining View Similar

In Stock

-
242

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N6796 2N6798   2N6756   2N6766   2N6786   2N6790   2N6792  
Manufacturer Microsemi Corporation Microsemi Corporation Harris Corporation Microsemi Corporation Harris Corporation Microsemi Corporation Harris Corporation
Product Status Obsolete Obsolete Active Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V 200 V 400 V 200 V 400 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 5.5A (Tc) 14A (Tc) 30A (Tc) 1.25A (Tc) 3.5A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 10V 400mOhm @ 3.5A, 10V 210mOhm @ 14A, 10V 90mOhm @ 30A, 10V 3.7Ohm @ 1.25A, 10V 800mOhm @ 2.25A, 10V 1.8Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.34 nC @ 10 V 5.29 nC @ 10 V 35 nC @ 10 V 115 nC @ 10 V 12 nC @ 10 V 14.3 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - - - - 170 pF @ 25 V - 600 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 800mW (Ta), 25W (Tc) 800mW (Ta), 25W (Tc) 4W (Ta), 75W (Tc) 4W (Ta), 150W (Tc) 15W (Tc) 800mW (Tc) 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-39 TO-39 TO-204AA TO-3 TO-205AF (TO-39) TO-39 TO-205AF (TO-39)
Package / Case TO-205AF Metal Can TO-205AF Metal Can TO-204AA, TO-3 TO-204AE TO-205AF Metal Can TO-205AF Metal Can TO-205AF Metal Can

Related Product By Categories

CSD17510Q5A
CSD17510Q5A
Texas Instruments
MOSFET N-CH 30V 20A/100A 8VSON
TPN5R203PL,LQ
TPN5R203PL,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 38A 8TSON
RM4N700LD
RM4N700LD
Rectron USA
MOSFET N-CHANNEL 700V 4A TO252-2
IPB160N04S3H2ATMA1
IPB160N04S3H2ATMA1
Infineon Technologies
MOSFET N-CH 40V 160A TO263-7
IRFD9024
IRFD9024
Vishay Siliconix
MOSFET P-CH 60V 1.6A 4DIP
ZVP1320ASTOB
ZVP1320ASTOB
Diodes Incorporated
MOSFET P-CH 200V 70MA E-LINE
SPB100N08S2-07
SPB100N08S2-07
Infineon Technologies
MOSFET N-CH 75V 100A TO263-3
NTD95N02R-001
NTD95N02R-001
onsemi
MOSFET N-CH 24V 12A/32A IPAK
IPB100N04S2L03ATMA1
IPB100N04S2L03ATMA1
Infineon Technologies
MOSFET N-CH 40V 100A TO263-3
IXFR15N100P
IXFR15N100P
IXYS
MOSFET N-CH 1000V ISOPLUS247
IXTP3N110
IXTP3N110
IXYS
MOSFET N-CH 1100V 3A TO220AB
HAT2185WPWS-E
HAT2185WPWS-E
Renesas Electronics America Inc
MOSFET N-CH 150V 10A 8WPAK

Related Product By Brand

2EZ3.9D5E3/TR12
2EZ3.9D5E3/TR12
Microsemi Corporation
DIODE ZENER 3.9V 2W DO204AL
2EZ47D5E3/TR12
2EZ47D5E3/TR12
Microsemi Corporation
DIODE ZENER 47V 2W DO204AL
SMAJ5951AE3/TR13
SMAJ5951AE3/TR13
Microsemi Corporation
DIODE ZENER 120V 3W DO214AC
2EZ180D/TR8
2EZ180D/TR8
Microsemi Corporation
DIODE ZENER 180V 2W DO204AL
2EZ6.2D5E3/TR8
2EZ6.2D5E3/TR8
Microsemi Corporation
DIODE ZENER 6.2V 2W DO204AL
2EZ9.1D10E3/TR8
2EZ9.1D10E3/TR8
Microsemi Corporation
DIODE ZENER 9.1V 2W DO204AL
3EZ3.9D10/TR8
3EZ3.9D10/TR8
Microsemi Corporation
DIODE ZENER 3.9V 3W DO204AL
1PMT4622C/TR13
1PMT4622C/TR13
Microsemi Corporation
DIODE ZENER 3.9V 1W DO216
1N5244B (DO-35)
1N5244B (DO-35)
Microsemi Corporation
DIODE ZENER 14V 500MW DO35
A54SX16A-1FG144I
A54SX16A-1FG144I
Microsemi Corporation
IC FPGA 111 I/O 144FBGA
LX1563IM
LX1563IM
Microsemi Corporation
IC PFC CTRLR DCM 1.7MHZ 8DIP
LXMG1813-12-62S
LXMG1813-12-62S
Microsemi Corporation
MOD INVERTER CCFL 6W 12V PROG