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| Part Number | 2N6790 | 2N6792 | 2N6796 | 2N6798 | 2N6760 | 2N6770 |
|---|---|---|---|---|---|---|
| Manufacturer | Microsemi Corporation | Harris Corporation | Microsemi Corporation | Microsemi Corporation | Harris Corporation | Microsemi Corporation |
| Product Status | Obsolete | Active | Obsolete | Obsolete | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 400 V | 100 V | 200 V | 400 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) | 2A (Tc) | 8A (Tc) | 5.5A (Tc) | 5.5A (Tc) | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.25A, 10V | 1.8Ohm @ 1.25A, 10V | 180mOhm @ 5A, 10V | 400mOhm @ 3.5A, 10V | 1.22Ohm @ 5.5A, 10V | 500mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 1mA | 4V @ 250mA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V | - | 6.34 nC @ 10 V | 5.29 nC @ 10 V | 39 nC @ 10 V | 120 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 600 pF @ 25 V | - | - | - | - |
| FET Feature | - | - | - | - | - | - |
| Power Dissipation (Max) | 800mW (Tc) | 20W (Tc) | 800mW (Ta), 25W (Tc) | 800mW (Ta), 25W (Tc) | 4W (Ta), 75W (Tc) | 4W (Ta), 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-39 | TO-205AF (TO-39) | TO-39 | TO-39 | TO-204AA | TO-3 |
| Package / Case | TO-205AF Metal Can | TO-205AF Metal Can | TO-205AF Metal Can | TO-205AF Metal Can | TO-204AA, TO-3 | TO-204AE |
