2N6788
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Microsemi Corporation 2N6788

Manufacturer No:
2N6788
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6788 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 6A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):800mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AF Metal Can
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Similar Products

Part Number 2N6788 2N6798   2N6758   2N6768   2N6782   2N6784   2N6786  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Harris Corporation
Product Status Obsolete Obsolete Obsolete Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 200 V 400 V 100 V 200 V 400 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 5.5A (Tc) 9A (Tc) 14A (Tc) 3.5A (Tc) 2.25A (Tc) 1.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 3.5A, 10V 400mOhm @ 3.5A, 10V 490mOhm @ 9A, 10V 400mOhm @ 14A, 10V 600mOhm @ 2.25A, 10V 1.5Ohm @ 1.5A, 0V 3.7Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 5.29 nC @ 10 V 39 nC @ 10 V 110 nC @ 10 V 8.1 nC @ 10 V 8.6 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - - - - - - 170 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 800mW (Tc) 800mW (Ta), 25W (Tc) 4W (Ta), 75W (Tc) 4W (Ta), 150W (Tc) 800mW (Ta), 15W (Tc) 800mW (Ta), 15W (Tc) 15W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-39 TO-39 TO-204AA TO-3 TO-39 TO-39 TO-205AF (TO-39)
Package / Case TO-205AF Metal Can TO-205AF Metal Can TO-204AA, TO-3 TO-204AE TO-205AF Metal Can TO-205AF Metal Can TO-205AF Metal Can

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