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| Part Number | 2N6784 | 2N6786 | 2N6788 | 2N6764 | 2N6782 |
|---|---|---|---|---|---|
| Manufacturer | Microsemi Corporation | Harris Corporation | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation |
| Product Status | Obsolete | Active | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 400 V | 100 V | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 2.25A (Tc) | 1.25A (Tc) | 6A (Tc) | 38A (Tc) | 3.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 0V | 3.7Ohm @ 1.25A, 10V | 300mOhm @ 3.5A, 10V | 65mOhm @ 38A, 10V | 600mOhm @ 2.25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 10 V | 12 nC @ 10 V | 18 nC @ 10 V | 125 nC @ 10 V | 8.1 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 170 pF @ 25 V | - | - | - |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 800mW (Ta), 15W (Tc) | 15W (Tc) | 800mW (Tc) | 4W (Ta), 150W (Tc) | 800mW (Ta), 15W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-39 | TO-205AF (TO-39) | TO-39 | TO-3 | TO-39 |
| Package / Case | TO-205AF Metal Can | TO-205AF Metal Can | TO-205AF Metal Can | TO-204AE | TO-205AF Metal Can |
