2N6782
  • Share:

Microsemi Corporation 2N6782

Manufacturer No:
2N6782
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6782 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 3.5A TO39
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):800mW (Ta), 15W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AF Metal Can
0 Remaining View Similar

In Stock

-
320

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N6782 2N6792   2N6786   2N6784   2N6788   2N6762  
Manufacturer Microsemi Corporation Harris Corporation Harris Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 400 V 400 V 200 V 100 V 500 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 2A (Tc) 1.25A (Tc) 2.25A (Tc) 6A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.25A, 10V 1.8Ohm @ 1.25A, 10V 3.7Ohm @ 1.25A, 10V 1.5Ohm @ 1.5A, 0V 300mOhm @ 3.5A, 10V 1.8Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 1mA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 10 V - 12 nC @ 10 V 8.6 nC @ 10 V 18 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 600 pF @ 25 V 170 pF @ 25 V - - -
FET Feature - - - - - -
Power Dissipation (Max) 800mW (Ta), 15W (Tc) 20W (Tc) 15W (Tc) 800mW (Ta), 15W (Tc) 800mW (Tc) 4W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-39 TO-205AF (TO-39) TO-205AF (TO-39) TO-39 TO-39 TO-204AA
Package / Case TO-205AF Metal Can TO-205AF Metal Can TO-205AF Metal Can TO-205AF Metal Can TO-205AF Metal Can TO-204AA, TO-3

Related Product By Categories

FDP10AN06A0
FDP10AN06A0
Fairchild Semiconductor
MOSFET N-CH 60V 12A/75A TO220-3
PXN6R2-25QLJ
PXN6R2-25QLJ
Nexperia USA Inc.
PXN6R2-25QL/SOT8002/MLPAK33
TPH3300CNH,L1Q
TPH3300CNH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 150V 18A 8SOP
SQJ464EP-T1_GE3
SQJ464EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 32A PPAK SO-8
IPL60R125P7AUMA1
IPL60R125P7AUMA1
Infineon Technologies
MOSFET N-CH 650V 27A 4VSON
FCP290N80
FCP290N80
onsemi
MOSFET N-CH 800V 17A TO220-3
IXFA130N15X3
IXFA130N15X3
IXYS
MOSFET N-CH 150V 130A TO263AA
SIHFR220-GE3
SIHFR220-GE3
Vishay Siliconix
MOSFET N-CH 200V 4.8A DPAK
SI7846DP-T1-GE3
SI7846DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 150V 4A PPAK SO-8
IRL540NLPBF
IRL540NLPBF
Infineon Technologies
MOSFET N-CH 100V 36A TO262
SI4487DY-T1-GE3
SI4487DY-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 11.6A 8SO
SCT4036KRHRC15
SCT4036KRHRC15
Rohm Semiconductor
1200V, 43A, 4-PIN THD, TRENCH-ST

Related Product By Brand

SMCJ6063E3/TR13
SMCJ6063E3/TR13
Microsemi Corporation
TVS DIODE 81VWM 144VC DO214AB
MXLP5KE20A
MXLP5KE20A
Microsemi Corporation
TVS DIODE 20VWM 32.4VC DO204AL
MP5KE36CA
MP5KE36CA
Microsemi Corporation
TVS DIODE 36VWM 58.1VC DO204AL
MPLAD6.5KP51A
MPLAD6.5KP51A
Microsemi Corporation
TVS DIODE 51VWM 82.4VC PLAD
FST16145D
FST16145D
Microsemi Corporation
DIODE MODULE 45V TO249
1N5950DG
1N5950DG
Microsemi Corporation
DIODE ZENER 110V 1.25W DO204AL
JANTX1N4490DUS
JANTX1N4490DUS
Microsemi Corporation
DIODE ZENER 110V 1.5W D5A
3EZ18DE3/TR12
3EZ18DE3/TR12
Microsemi Corporation
DIODE ZENER 18V 3W DO204AL
3EZ200D10E3/TR12
3EZ200D10E3/TR12
Microsemi Corporation
DIODE ZENER 200V 3W DO204AL
1N4682 (DO35)
1N4682 (DO35)
Microsemi Corporation
DIODE ZENER 2.7V 500MW DO35
AGLN030V2-ZQNG68I
AGLN030V2-ZQNG68I
Microsemi Corporation
IC FPGA 49 I/O 68QFN
LX8385A-33CDD
LX8385A-33CDD
Microsemi Corporation
IC REG LIN 3.3V 3A TO263 POWER