2N6770
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Microsemi Corporation 2N6770

Manufacturer No:
2N6770
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6770 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 12A TO3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):4W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-204AE
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Similar Products

Part Number 2N6770 2N6790   2N6760  
Manufacturer Microsemi Corporation Microsemi Corporation Harris Corporation
Product Status Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 200 V 400 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 3.5A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 12A, 10V 800mOhm @ 2.25A, 10V 1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 14.3 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - - -
FET Feature - - -
Power Dissipation (Max) 4W (Ta), 150W (Tc) 800mW (Tc) 4W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3 TO-39 TO-204AA
Package / Case TO-204AE TO-205AF Metal Can TO-204AA, TO-3

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