2N6768
  • Share:

Microsemi Corporation 2N6768

Manufacturer No:
2N6768
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6768 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 14A TO3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):4W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-204AE
0 Remaining View Similar

In Stock

-
210

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N6768 2N6788   2N6798   2N6758   2N6760   2N6761   2N6762   2N6764   2N6766  
Manufacturer Microsemi Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation Harris Corporation Harris Corporation Microsemi Corporation Microsemi Corporation Microsemi Corporation
Product Status Active Obsolete Obsolete Obsolete Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 100 V 200 V 200 V 400 V 450 V 500 V 100 V 200 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 6A (Tc) 5.5A (Tc) 9A (Tc) 5.5A (Tc) 4A (Tc) 4.5A (Tc) 38A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 14A, 10V 300mOhm @ 3.5A, 10V 400mOhm @ 3.5A, 10V 490mOhm @ 9A, 10V 1.22Ohm @ 5.5A, 10V 2Ohm @ 2.5A, 10V 1.8Ohm @ 4.5A, 10V 65mOhm @ 38A, 10V 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 1mA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 18 nC @ 10 V 5.29 nC @ 10 V 39 nC @ 10 V 39 nC @ 10 V - 40 nC @ 10 V 125 nC @ 10 V 115 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - - - - - 800 pF @ 25 V - - -
FET Feature - - - - - - - - -
Power Dissipation (Max) 4W (Ta), 150W (Tc) 800mW (Tc) 800mW (Ta), 25W (Tc) 4W (Ta), 75W (Tc) 4W (Ta), 75W (Tc) 75W (Tc) 4W (Ta), 75W (Tc) 4W (Ta), 150W (Tc) 4W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3 TO-39 TO-39 TO-204AA TO-204AA TO-3 TO-204AA TO-3 TO-3
Package / Case TO-204AE TO-205AF Metal Can TO-205AF Metal Can TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AE TO-204AE

Related Product By Categories

TK28V65W,LQ
TK28V65W,LQ
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
TP65H070LDG
TP65H070LDG
Transphorm
GANFET N-CH 650V 25A 3PQFN
DMN3065LW-13
DMN3065LW-13
Diodes Incorporated
MOSFET N-CH 30V 4A SOT323
IRFR6215TRPBF
IRFR6215TRPBF
Infineon Technologies
MOSFET P-CH 150V 13A DPAK
PJQ4448P-AU_R2_000A1
PJQ4448P-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
NTTFS008N04CTAG
NTTFS008N04CTAG
onsemi
MOSFET N-CH 40V 14A/48A 8WDFN
IXTH160N15T
IXTH160N15T
IXYS
MOSFET N-CH 150V 160A TO247
STD30NE06L
STD30NE06L
STMicroelectronics
MOSFET N-CH 60V 30A DPAK
HUFA75337P3
HUFA75337P3
onsemi
MOSFET N-CH 55V 75A TO220-3
IXTY3N60P
IXTY3N60P
IXYS
MOSFET N-CH 600V 3A TO252
MCAC10H03-TP
MCAC10H03-TP
Micro Commercial Co
MOSFET N-CH 30V 100A DFN5060-8
RD3P050SNFRATL
RD3P050SNFRATL
Rohm Semiconductor
MOSFET N-CH 100V 5A TO252

Related Product By Brand

SMCJ5652/TR13
SMCJ5652/TR13
Microsemi Corporation
TVS DIODE 50.2VWM 89VC DO214AB
SMCJ5655AE3/TR13
SMCJ5655AE3/TR13
Microsemi Corporation
TVS DIODE 70.1VWM 113VC DO214AB
SMCJ6066AE3/TR13
SMCJ6066AE3/TR13
Microsemi Corporation
TVS DIODE 110VWM 182VC DO214AB
MPLAD6.5KP51CA
MPLAD6.5KP51CA
Microsemi Corporation
TVS DIODE 51VWM 82.4VC PLAD
1N5917BG
1N5917BG
Microsemi Corporation
DIODE ZENER 4.7V 1.25W DO204AL
1N5949DG
1N5949DG
Microsemi Corporation
DIODE ZENER 100V 1.25W DO204AL
3EZ3.6D/TR12
3EZ3.6D/TR12
Microsemi Corporation
DIODE ZENER 3.6V 3W DO204AL
SMBJ5950B/TR13
SMBJ5950B/TR13
Microsemi Corporation
DIODE ZENER 110V 2W SMBJ
A42MX24-FTQ176
A42MX24-FTQ176
Microsemi Corporation
IC FPGA 150 I/O 176TQFP
A2F060M3E-FGG256
A2F060M3E-FGG256
Microsemi Corporation
IC SOC CORTEX-M3 80MHZ 256FBGA
LX8585A-00CP
LX8585A-00CP
Microsemi Corporation
IC REG LIN POS ADJ 4.6A TO220
LX8384B-00CDD
LX8384B-00CDD
Microsemi Corporation
IC REG CONV 1OUT ADJ 5A TO263