2N6766
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Microsemi Corporation 2N6766

Manufacturer No:
2N6766
Manufacturer:
Microsemi Corporation
Package:
Bulk
Datasheet:
2N6766 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 30A TO3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):4W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-204AE
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Similar Products

Part Number 2N6766 2N6786   2N6768   2N6796   2N6756   2N6760   2N6761   2N6762   2N6764  
Manufacturer Microsemi Corporation Harris Corporation Microsemi Corporation Microsemi Corporation Harris Corporation Harris Corporation Harris Corporation Microsemi Corporation Microsemi Corporation
Product Status Obsolete Active Active Obsolete Active Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 400 V 400 V 100 V 100 V 400 V 450 V 500 V 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 1.25A (Tc) 14A (Tc) 8A (Tc) 14A (Tc) 5.5A (Tc) 4A (Tc) 4.5A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 30A, 10V 3.7Ohm @ 1.25A, 10V 400mOhm @ 14A, 10V 180mOhm @ 5A, 10V 210mOhm @ 14A, 10V 1.22Ohm @ 5.5A, 10V 2Ohm @ 2.5A, 10V 1.8Ohm @ 4.5A, 10V 65mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250mA 4V @ 250µA 4V @ 250µA 4V @ 1mA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 10 V 12 nC @ 10 V 110 nC @ 10 V 6.34 nC @ 10 V 35 nC @ 10 V 39 nC @ 10 V - 40 nC @ 10 V 125 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 170 pF @ 25 V - - - - 800 pF @ 25 V - -
FET Feature - - - - - - - - -
Power Dissipation (Max) 4W (Ta), 150W (Tc) 15W (Tc) 4W (Ta), 150W (Tc) 800mW (Ta), 25W (Tc) 4W (Ta), 75W (Tc) 4W (Ta), 75W (Tc) 75W (Tc) 4W (Ta), 75W (Tc) 4W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3 TO-205AF (TO-39) TO-3 TO-39 TO-204AA TO-204AA TO-3 TO-204AA TO-3
Package / Case TO-204AE TO-205AF Metal Can TO-204AE TO-205AF Metal Can TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AA, TO-3 TO-204AE

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